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SI4401FDY-T1-GE3 AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

SI4401FDY-T1-GE3 product

SI4401FDY-T1-GE3

MOSFETs - Single

P-ChannelMOSFET40VSO-8

The Si4401FDY is a high-performance P-Channel TrenchFET Gen III MOSFET optimized for power switching applications in an SO-8 package.

Best for

  • Power switching
  • Battery management

Avoid if

  • Applications requiring N-Channel polarity

Check before use

  • Thermal dissipation requirements

Key specifications

VDS
-40 V
ID
-14 A
RDS(on)
0.0142 Ω

Compliance & Environment

RoHS
ROHS3 Compliant
REACH
-
MSL
-
ECCN
EAR99
HTSUS
8541100080.0

Application

Power ManagementMotor Control

Datasheet

e441066191042c47da0cc4faeafad7ae_2301040930_Vishay-Intertech-SI4401FDY-T1-GE3_C5224047.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for SI4401FDY-T1-GE3: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Where to Buy

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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a 40 V P-Channel power MOSFET utilizing Vishay's TrenchFET Gen III technology, housed in an SO-8 package.