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SI4435DDY-T1-GE3-HXY AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

SI4435DDY-T1-GE3-HXY product

SI4435DDY-T1-GE3-HXY

MOSFETs - Single

MOSFETP-ChannelSOP-8

The SI4435DDY-T1-GE3 is a P-Channel enhancement mode MOSFET in an SOP-8 package, optimized for low-voltage switching applications.

Best for

  • Battery protection
  • Load switching

Avoid if

  • Applications requiring N-Channel logic or higher voltage ratings

Check before use

  • Thermal dissipation requirements

Key specifications

VDS
-30 V
ID
-9 A
RDS(ON)
< 20 mΩ

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power Management

Datasheet

da5f095d763b250e6d643f08263dd534_2403261740_HXY-MOSFET-SI4435DDY-T1-GE3-HXY_C22367020.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for SI4435DDY-T1-GE3-HXY: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a P-Channel trench MOSFET designed for efficient switching in battery protection and power management circuits.