ProjectsPricingInsights

SI4435DDY-T1-GE3 AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

SI4435DDY-T1-GE3 product

SI4435DDY-T1-GE3

MOSFETs - Single

P-ChannelMOSFETTrenchFET30V

The Si4435DDY-T1-GE3 is a robust P-Channel TrenchFET MOSFET optimized for load and battery switching in industrial and consumer electronics.

Best for

  • Battery management
  • Load switching

Avoid if

  • Applications requiring N-Channel polarity
  • High-frequency switching exceeding gate charge limits

Check before use

  • Thermal dissipation requirements
  • Gate drive voltage compatibility

Key specifications

Vds
-30 V
Id
-11.4 A
Rds(on)
0.024 Ohm

Compliance & Environment

RoHS
ROHS3 Compliant
REACH
-
MSL
-
ECCN
EAR99
HTSUS
8541290095.0

Application

Power ManagementConsumer Electronics

Datasheet

PRICS00003-1.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for SI4435DDY-T1-GE3: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
Get Files
PCB Footprint
Land pattern for PCB layout
Get Files
3D Model
STEP file for mechanical design
Get Files
KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
Generate library

Login required · CAD models billed separately as an add-on

Where to Buy

Real-time and catalog pricing from verified distributors

Live prices updated on demand · Catalog (~) prices may differ

Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a 30V P-Channel MOSFET from Vishay Siliconix, utilizing TrenchFET technology for efficient power switching.