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SI4435DYTRPBF-HXY AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

SI4435DYTRPBF-HXY product

SI4435DYTRPBF-HXY

MOSFETs - Single

P-ChannelMOSFETSOP-830V

The SI4435DYTRPBF is a standard P-Channel MOSFET in an SOP-8 package, optimized for low-voltage switching and battery protection.

Best for

  • Battery management systems
  • Low-side switching

Avoid if

  • High-voltage applications exceeding 30V

Check before use

  • Gate drive voltage levels
  • Thermal dissipation requirements

Key specifications

VDS
-30 V
ID
-11 A
RDS(on)
16 mΩ

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power ManagementConsumer Electronics

Datasheet

9d783fd355c4770ecf18b4ce524a3917_2308221404_HXY-MOSFET-SI4435DYTRPBF-HXY_C7543021.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for SI4435DYTRPBF-HXY: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a P-Channel enhancement mode MOSFET using trench technology, rated for -30V and -11A.