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SI4447DY-T1-E3-HXY AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

SI4447DY-T1-E3-HXY product

SI4447DY-T1-E3-HXY

MOSFETs

P-ChannelMOSFET40VSOP-8

The SI4447DY-T1-E3 is a 40V, 13A P-Channel MOSFET in an SOP-8 package, optimized for battery protection and load switching.

Best for

  • Battery management
  • Power switching

Avoid if

  • Applications requiring N-Channel logic
  • High-frequency switching beyond design limits

Check before use

  • Thermal dissipation requirements
  • Gate drive voltage levels

Key specifications

VDS
-40 V
ID
-13 A
RDS(on)
14 mΩ

Compliance & Environment

RoHS
Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power ManagementBattery Protection

Datasheet

c73856c6761700d7a4132ff022fe96ef_2403261736_HXY-MOSFET-SI4447DY-T1-E3-HXY_C22366736.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for SI4447DY-T1-E3-HXY: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a P-Channel enhancement mode MOSFET designed for high-efficiency switching applications.