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Si4532CDY-HXY AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

Si4532CDY-HXY product

Si4532CDY-HXY

MOSFETs - Arrays

MOSFETDual ChannelSOP-8

The Si4532CDY is a dual N+P-channel enhancement mode MOSFET in an SOP-8 package, designed for battery protection and switching applications.

Best for

  • Battery protection
  • Load switching

Avoid if

  • High-power applications exceeding thermal limits

Check before use

  • Gate drive voltage levels
  • Thermal resistance

Key specifications

VDS
30V / -30V
ID
7A / -8.5A
RDS(ON)
<25mΩ / <35mΩ

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power ManagementBattery Protection

Datasheet

4834c32dfcfafdf9d01f658936e4721e_2403261738_HXY-MOSFET-Si4532CDY-HXY_C22366933.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for Si4532CDY-HXY: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a dual N+P-channel enhancement mode MOSFET using advanced trench technology, housed in an SOP-8 package.