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SI4599DY-T1-GE3 AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

SI4599DY-T1-GE3 product

SI4599DY-T1-GE3

MOSFETs - Arrays

MOSFETDual ChannelTrenchFET40V

The SI4599DY-T1-GE3 is a dual N- and P-channel 40V TrenchFET MOSFET pair in an SO-8 package, optimized for power conversion applications.

Best for

  • LCD backlight inverters
  • Full bridge converters

Avoid if

  • Applications requiring higher current or voltage ratings

Check before use

  • Thermal design
  • Gate drive voltage levels

Key specifications

Vds
40 V
Id (N-Ch)
6.8 A
Id (P-Ch)
-5.8 A
Rds(on) (N-Ch)
35.5 mΩ

Compliance & Environment

RoHS
ROHS3 Compliant
REACH
-
MSL
-
ECCN
EAR99
HTSUS
8541290095.0

Application

Power ConversionLCD Displays

CAD Models

Download ECAD models for SI4599DY-T1-GE3: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Where to Buy

Real-time and catalog pricing from verified distributors

Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a dual-channel (N- and P-channel) power MOSFET pair from Vishay Siliconix, housed in an SO-8 surface-mount package.