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SI4800BDY-T1-GE3-HXY AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

SI4800BDY-T1-GE3-HXY product

SI4800BDY-T1-GE3-HXY

MOSFETs - Single

N-ChannelMOSFET30VSOP-8

The SI4800BDY-T1-GE3 is a 30V, 8.5A N-Channel MOSFET in an SOP-8 package, optimized for battery protection and switching applications.

Best for

  • Battery management
  • Load switching

Avoid if

  • High-voltage applications exceeding 30V

Check before use

  • Thermal dissipation requirements

Key specifications

VDS
30 V
ID
8.5 A
RDS(ON)
18 mΩ

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power ManagementConsumer Electronics

Datasheet

d1b4b287ed7260d683a719a21d1ff59a_2403261735_HXY-MOSFET-SI4800BDY-T1-GE3-HXY_C22366562.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for SI4800BDY-T1-GE3-HXY: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an N-Channel enhancement mode MOSFET designed for efficient switching, featuring advanced trench technology.