ProjectsPricingInsights

SI4825DDY-T1-GE3 AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

SI4825DDY-T1-GE3 product

SI4825DDY-T1-GE3

MOSFETs - Single

P-ChannelMOSFET30VTrenchFET

The SI4825DDY-T1-GE3 is a high-performance P-Channel TrenchFET MOSFET optimized for power switching applications.

Best for

  • Load switching
  • Notebook power management

Avoid if

  • Applications requiring N-Channel polarity
  • Extremely high-power designs exceeding SO-8 thermal limits

Check before use

  • Thermal dissipation requirements
  • Gate drive voltage compatibility

Key specifications

VDS
-30 V
ID
-14.9 A
RDS(on)
0.0125 Ohm

Compliance & Environment

RoHS
ROHS3 Compliant
REACH
-
MSL
-
ECCN
EAR99
HTSUS
8541290095.0

Application

Power ManagementConsumer Electronics

Datasheet

beeb27212aef86f6b2f392d5000faf77_VISHAY(威世)&SI4825DDY-T1-GE3.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for SI4825DDY-T1-GE3: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
Get Files
PCB Footprint
Land pattern for PCB layout
Get Files
3D Model
STEP file for mechanical design
Get Files
KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
Generate library

Login required · CAD models billed separately as an add-on

Where to Buy

Real-time and catalog pricing from verified distributors

Live prices updated on demand · Catalog (~) prices may differ

Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a 30V P-Channel power MOSFET from Vishay Siliconix, utilizing TrenchFET technology for efficient power switching.