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SI4904DY-T1-E3-HXY AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

SI4904DY-T1-E3-HXY product

SI4904DY-T1-E3-HXY

MOSFETs - Arrays

Dual MOSFETN-Channel40VSOP-8

The SI4904DY-T1-E3 is a dual N-channel enhancement mode MOSFET in an SOP-8 package, designed for 40V, 12A switching applications.

Best for

  • Battery protection circuits
  • Load switching
  • UPS systems

Avoid if

  • Applications exceeding 40V or 12A continuous current

Check before use

  • Thermal dissipation requirements
  • Gate drive voltage levels

Key specifications

VDS
40 V
ID
12 A
RDS(ON)
16 mΩ (max @ 10V)

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power ManagementIndustrial

Datasheet

f0bdae9b6d770ef08c93beb71a0510c8_2403261739_HXY-MOSFET-SI4904DY-T1-E3-HXY_C22366955.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for SI4904DY-T1-E3-HXY: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a dual N-channel enhancement mode MOSFET utilizing advanced trench technology, suitable for battery protection and load switching.