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SI4925DDY-T1-GE3-HXY AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

SI4925DDY-T1-GE3-HXY product

SI4925DDY-T1-GE3-HXY

MOSFETs

Dual P-ChannelMOSFETSOP-8Trench Technology

The SI4925DDY-T1-GE3 is a dual P-channel MOSFET in an SOP-8 package, optimized for PWM and load switching applications with low RDS(ON).

Best for

  • PWM control
  • Load switching

Avoid if

  • High-power applications exceeding 1.5W dissipation

Check before use

  • Gate drive voltage levels
  • Thermal dissipation requirements

Key specifications

VDS
-30 V
ID
-8.5 A
RDS(ON)
18 mΩ
Package
SOP-8

Compliance & Environment

RoHS
Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power ManagementIndustrial

Datasheet

f474fd50918afc6f7c72fb0bf1b5fca4_2404231719_HXY-MOSFET-SI4925DDY-T1-GE3-HXY_C22367334.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for SI4925DDY-T1-GE3-HXY: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a dual P-channel enhancement mode MOSFET utilizing advanced trench technology, packaged in an SOP-8 format.