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SI7106DN-T1-E3-HXY AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

SI7106DN-T1-E3-HXY product

SI7106DN-T1-E3-HXY

MOSFETs - Single

N-ChannelMOSFET20V60A

The SI7106DN-T1-E3 is a 20V, 60A N-Channel MOSFET in a compact DFN3X3-8L package, optimized for low-voltage switching applications.

Best for

  • Battery management systems
  • Load switching

Avoid if

  • High-voltage applications exceeding 20V

Check before use

  • Thermal design and gate drive voltage

Key specifications

VDS
20 V
ID
60 A
RDS(on)
5 mΩ

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power ManagementIndustrial

Datasheet

d824bbe5c0f278e1995727f351eddc34_2403261738_HXY-MOSFET-SI7106DN-T1-E3-HXY_C22366923.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for SI7106DN-T1-E3-HXY: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

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PCB Footprint
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3D Model
STEP file for mechanical design
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an N-Channel Enhancement Mode MOSFET designed for high-efficiency switching, featuring low RDS(ON) and low gate charge.