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SI7119DN-T1-GE3 AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

SI7119DN-T1-GE3 product

SI7119DN-T1-GE3

MOSFETs - Single

P-Channel200VMOSFETTrenchFET

The SI7119DN-T1-GE3 is a 200V P-Channel TrenchFET MOSFET designed for high-efficiency power applications.

Best for

  • Intermediate DC/DC power supplies
  • Active clamp circuits

Avoid if

  • Applications requiring N-channel polarity
  • Extremely high current loads exceeding 4A

Check before use

  • Gate drive voltage levels
  • Thermal dissipation requirements

Key specifications

VDS
-200 V
ID
-3.8 A
RDS(on)
1.05 Ohm
Qg
10.6 nC

Compliance & Environment

RoHS
ROHS3 Compliant
REACH
-
MSL
-
ECCN
EAR99
HTSUS
8541290095.0

Application

Power Supplies

Datasheet

09ca516b2e6baa6af0e4597fb2353dbd_2005201836_Vishay-Intertech-SI7119DN-T1-GE3_C540964.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for SI7119DN-T1-GE3: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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Where to Buy

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Live prices updated on demand · Catalog (~) prices may differ

Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a 200V P-Channel Power MOSFET from Vishay Siliconix, utilizing TrenchFET technology in a compact PowerPAK 1212-8 package.