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SI7121ADN-T1-GE3-HXY AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

SI7121ADN-T1-GE3-HXY product

SI7121ADN-T1-GE3-HXY

MOSFETs - Single

P-ChannelMOSFET30VDFN3X3-8L

The SI7121ADN-T1-GE3 is a 30V P-Channel MOSFET in a DFN3X3-8L package, optimized for high-current switching applications.

Best for

  • High-side switching
  • DC/DC power conversion

Avoid if

  • Applications requiring N-Channel polarity
  • Extreme high-temperature environments exceeding 150°C

Check before use

  • Gate drive voltage levels
  • Thermal dissipation requirements

Key specifications

VDS
-30 V
ID
-35 A
RDS(on)
15 mΩ

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power ManagementIndustrial

Datasheet

cc9b4988549e924cc348fff88615f746_2403261740_HXY-MOSFET-SI7121ADN-T1-GE3-HXY_C22367081.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for SI7121ADN-T1-GE3-HXY: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a P-Channel enhancement mode MOSFET designed for high-current load applications, featuring low on-resistance and low gate charge.