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SI7137DP-T1-GE3 AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

SI7137DP-T1-GE3 product

SI7137DP-T1-GE3

MOSFETs - Single

P-ChannelMOSFETPowerPAK SO-820V

The SI7137DP-T1-GE3 is a high-performance P-Channel 20V MOSFET from Vishay Siliconix, optimized for high-current switching applications in a compact PowerPAK SO-8 package.

Best for

  • Battery management systems
  • Load switching
  • Adaptor switches

Avoid if

  • Applications requiring N-Channel polarity
  • High-voltage systems exceeding 20V

Check before use

  • Thermal dissipation requirements
  • Gate drive voltage levels

Key specifications

Vds
-20 V
Id (Continuous)
-60 A
Rds(on) max
0.00195 Ohm
Package
PowerPAK SO-8

Compliance & Environment

RoHS
ROHS3 Compliant
REACH
-
MSL
-
ECCN
EAR99
HTSUS
8541290095.0

Application

Power ManagementIndustrial

Datasheet

787db414a445a953980f53252b0cf569_2009180305_Vishay-Intertech-SI7137DP-T1-GE3_C784367.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for SI7137DP-T1-GE3: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Where to Buy

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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a TrenchFET Gen III P-Channel power MOSFET designed for high-efficiency switching, featuring low on-resistance and high current capacity.