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SI7145DP-T1-GE3-HXY AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

SI7145DP-T1-GE3-HXY product

SI7145DP-T1-GE3-HXY

MOSFETs - Single

P-ChannelMOSFET30V100A

The SI7145DP-T1-GE3 is a high-current P-Channel MOSFET in a DFN5X6-8L package, suitable for battery protection and load switching.

Best for

  • Battery protection circuits
  • Load switching
  • UPS systems

Avoid if

  • Applications requiring N-Channel logic
  • Extremely space-constrained designs where DFN5X6 is too large

Check before use

  • Thermal dissipation requirements
  • Gate drive voltage compatibility

Key specifications

VDS
-30 V
ID
-100 A
RDS(ON)
< 4 mΩ
Package
DFN5X6-8L

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power ManagementIndustrial

Datasheet

4668552acef41b1efb081f9f926fd86b_2403261740_HXY-MOSFET-SI7145DP-T1-GE3-HXY_C22367087.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for SI7145DP-T1-GE3-HXY: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a P-Channel enhancement mode MOSFET designed for high-current switching applications, featuring low RDS(ON) and advanced trench technology.