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SI7192DP-T1-GE3-HXY AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

SI7192DP-T1-GE3-HXY product

SI7192DP-T1-GE3-HXY

MOSFETs - Single

N-ChannelMOSFET30V150A

The SI7192DP-T1-GE3 is a high-performance 30V N-Channel MOSFET in a DFN5X6-8L package, optimized for high-current applications like battery protection and load switching.

Best for

  • Battery protection
  • Load switching

Avoid if

  • Low-power applications where smaller packages are preferred

Check before use

  • Thermal dissipation requirements

Key specifications

Vdss
30 V
Id
150 A
Rds(on)
2.4 mΩ

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power Management

Datasheet

a862fffd942d63b3c7372673202c3f70_HXY MOSFET(华轩阳电子)&SI7192DP-T1-GE3-HXY.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for SI7192DP-T1-GE3-HXY: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an N-Channel enhancement mode MOSFET designed for high-efficiency switching applications.