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SI7216DN-T1-E3-HXY AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

SI7216DN-T1-E3-HXY product

SI7216DN-T1-E3-HXY

MOSFETs - Arrays

MOSFETDual N-Channel40VDFN3X3

The SI7216DN-T1-E3 is a dual N-channel MOSFET designed for efficient power switching in compact applications.

Best for

  • Battery management
  • Compact power switching

Avoid if

  • High-power applications exceeding 3W dissipation

Check before use

  • Gate drive voltage levels
  • Thermal dissipation requirements

Key specifications

VDS
40 V
ID
20 A
RDS(ON)
20 mΩ

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power ManagementIndustrial

Datasheet

f0f39d60f4d33168e4c0f953628efd07_2407151448_HXY-MOSFET-SI7216DN-T1-E3-HXY_C22366619.pdf

800 KB

Datasheet AI

CAD Models

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3D Model
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Where to Buy

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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a dual N-channel enhancement mode MOSFET in a DFN3X3B-8L package, optimized for low RDS(ON) and efficient switching.