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SI7218DN-T1-E3-HXY AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

SI7218DN-T1-E3-HXY product

SI7218DN-T1-E3-HXY

MOSFETs - Arrays

MOSFETDual N-Channel30V

The SI7218DN-T1-E3 is a dual N-channel MOSFET in a compact DFN3X3B-8L package, optimized for battery protection and switching circuits.

Best for

  • Battery protection
  • Mobile fast charging

Avoid if

  • High-voltage applications exceeding 30V

Check before use

  • Thermal dissipation requirements

Key specifications

VDS
30 V
ID
24 A
RDS(on)
18 mΩ

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Battery ProtectionSwitching

Datasheet

8ea0c8201ff3f479ed22662fc44ace2c_HXY MOSFET(华轩阳电子)&SI7218DN-T1-E3-HXY.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for SI7218DN-T1-E3-HXY: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

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PCB Footprint
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3D Model
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a dual N-channel enhancement mode MOSFET using trench technology, designed for efficient switching and battery protection.