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SI7309DN-T1-E3-HXY AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

SI7309DN-T1-E3-HXY product

SI7309DN-T1-E3-HXY

MOSFETs - Single

P-ChannelMOSFET60VDFN3x3

The SI7309DN-T1-E3 is a -60V P-Channel MOSFET in a DFN3x3-8L package, optimized for battery protection and load switching.

Best for

  • Battery protection circuits
  • Load switching

Avoid if

  • Applications requiring N-Channel logic
  • High-frequency switching beyond rated limits

Check before use

  • Thermal dissipation on the PCB
  • Gate drive voltage levels

Key specifications

VDS
-60 V
ID
-20 A
RDS(ON)
< 60 mΩ

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power ManagementIndustrial

Datasheet

3137cfb362e116ff3334dfc2e53e31d4_HXY MOSFET(华轩阳电子)&SI7309DN-T1-E3-HXY.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for SI7309DN-T1-E3-HXY: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

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PCB Footprint
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3D Model
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a P-Channel enhancement mode MOSFET designed for switching applications, featuring a -60V drain-source voltage and low on-resistance.