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SI7309DN-T1-GE3 AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

SI7309DN-T1-GE3 product

SI7309DN-T1-GE3

MOSFETs - Single

MOSFETP-Channel60VPowerPAK

The SI7309DN-T1-GE3 is a 60V P-Channel TrenchFET MOSFET optimized for space-constrained power applications.

Best for

  • CCFL inverters
  • Class D amplifiers

Avoid if

  • Applications requiring high-current handling beyond 8A

Check before use

  • Thermal dissipation requirements

Key specifications

VDS
-60 V
ID
-8 A
RDS(on)
0.115 Ohm

Compliance & Environment

RoHS
ROHS3 Compliant
REACH
-
MSL
-
ECCN
EAR99
HTSUS
8541290095.0

Application

Power

Datasheet

bcb38dc495127c37962db1fa084d2ef9_2103241954_Vishay-Intertech-SI7309DN-T1-GE3_C727725.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for SI7309DN-T1-GE3: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
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Where to Buy

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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a P-Channel 60V MOSFET from Vishay Siliconix, utilizing TrenchFET technology in a compact PowerPAK 1212-8 package.