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SI7336ADP-T1-GE3-HXY AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

SI7336ADP-T1-GE3-HXY product

SI7336ADP-T1-GE3-HXY

MOSFETs - Single

N-ChannelMOSFET30V150A

The SI7336ADP-T1-GE3 is a high-current N-channel MOSFET in a DFN5X6-8L package, optimized for low-voltage switching and battery management.

Best for

  • Battery protection
  • Load switching

Avoid if

  • Applications requiring extremely low gate drive below 4.5V

Check before use

  • Thermal dissipation capacity on the PCB

Key specifications

VDS
30 V
ID
150 A
RDS(on)
< 2.4 mΩ

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power ManagementBattery Protection

Datasheet

7f94664f1acf73475461e4d6c05c5d1e_2403261736_HXY-MOSFET-SI7336ADP-T1-GE3-HXY_C22366654.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for SI7336ADP-T1-GE3-HXY: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an N-channel enhancement mode MOSFET designed for high-efficiency switching applications.