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SI7386DP-T1-E3-HXY AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

SI7386DP-T1-E3-HXY product

SI7386DP-T1-E3-HXY

MOSFETs

N-ChannelMOSFET30VDFN5X6-8L

The SI7386DP-T1-E3 is a 30V N-Channel MOSFET in a DFN5X6-8L package, optimized for high-current battery protection and switching.

Best for

  • Battery protection circuits
  • Load switching
  • UPS systems

Avoid if

  • Applications requiring voltages significantly above 30V

Check before use

  • Thermal dissipation requirements at high currents

Key specifications

VDS
30 V
ID
80 A
RDS(ON)
6 mΩ

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power Management

Datasheet

65d78a2404803d64d1705dc0a7c42500_HXY MOSFET(华轩阳电子)&SI7386DP-T1-E3-HXY.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for SI7386DP-T1-E3-HXY: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

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PCB Footprint
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3D Model
STEP file for mechanical design
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an N-Channel enhancement mode MOSFET designed for high-efficiency switching and battery protection.