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SI7415DN-T1-GE3-HXY AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

SI7415DN-T1-GE3-HXY product

SI7415DN-T1-GE3-HXY

MOSFETs - Single

P-ChannelMOSFET60VTrench Technology

The SI7415DN-T1-GE3 is a P-Channel MOSFET designed for high-efficiency switching applications like battery protection and load management.

Best for

  • Battery protection
  • Load switching

Avoid if

  • Applications requiring N-Channel logic

Check before use

  • Thermal design for 25W dissipation

Key specifications

VDS
-60 V
ID
-20 A
RDS(on)
65 mΩ

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power ManagementIndustrial

Datasheet

dd43148728ed7eeebec6501c8b30f076_2403261654_HXY-MOSFET-SI7415DN-T1-GE3-HXY_C22367201.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for SI7415DN-T1-GE3-HXY: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

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PCB Footprint
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3D Model
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a P-Channel enhancement mode MOSFET utilizing advanced trench technology, optimized for low gate charge and low on-resistance.