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SI7617DN-T1-GE3 AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

SI7617DN-T1-GE3 product

SI7617DN-T1-GE3

MOSFETs - Single

P-ChannelMOSFET30VPowerPAK

The SI7617DN-T1-GE3 is a high-performance P-Channel TrenchFET MOSFET designed for space-constrained power management applications.

Best for

  • Notebook power management
  • Compact DC-DC switching

Avoid if

  • Applications requiring N-Channel polarity

Check before use

  • Thermal dissipation requirements

Key specifications

VDS
-30 V
ID
-35 A
RDS(on)
12.3 mΩ

Compliance & Environment

RoHS
ROHS3 Compliant
REACH
-
MSL
-
ECCN
EAR99
HTSUS
8541290095.0

Application

Power Management

Datasheet

af3663f88efdc8530ff7e8147065e1b3_2011170206_Vishay-Intertech-SI7617DN-T1-GE3_C727607.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for SI7617DN-T1-GE3: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
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Where to Buy

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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a 30V P-Channel power MOSFET from Vishay Siliconix, utilizing TrenchFET technology in a compact PowerPAK 1212-8 package.