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SI7619DN-T1-GE3-HXY AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

SI7619DN-T1-GE3-HXY product

SI7619DN-T1-GE3-HXY

MOSFETs - Single

P-ChannelMOSFET30VDFN3X3-8L

The SI7619DN-T1-GE3 is a 30V P-Channel MOSFET in a DFN3X3-8L package, optimized for battery protection and load switching.

Best for

  • Battery protection
  • Load switching

Avoid if

  • Applications requiring N-Channel polarity

Check before use

  • Thermal dissipation limits

Key specifications

VDS
-30 V
ID
-25 A
RDS(ON)
16 mΩ

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power ManagementIndustrial

Datasheet

eaec5b7a36ff86fd68d77f8985b8ea22_2403261738_HXY-MOSFET-SI7619DN-T1-GE3-HXY_C22366874.pdf

800 KB

Datasheet AI

CAD Models

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PCB Footprint
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3D Model
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a P-Channel enhancement mode MOSFET utilizing advanced trench technology for low RDS(ON) and low gate charge.