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Si7850DP-HXY AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

Si7850DP-HXY product

Si7850DP-HXY

MOSFETs - Single

N-ChannelMOSFET60V30ADFN5X6-8L

The Si7850DP-HXY is a 60V, 30A N-Channel MOSFET in a DFN5X6-8L package, optimized for high-efficiency switching in battery protection and power management circuits.

Best for

  • Battery protection
  • Load switching
  • UPS

Avoid if

  • Applications requiring extremely low gate drive voltages below 4.5V
  • High-frequency switching where gate charge is critical

Check before use

  • Thermal dissipation requirements
  • Gate drive voltage levels

Key specifications

VDS
60 V
ID
30 A
RDS(on)
25 mΩ

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power ManagementBattery Protection

Datasheet

6ec3dd1020d5eb1bc56e499d78cbf151_2212161630_HXY-MOSFET-Si7850DP-HXY_C5148670.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for Si7850DP-HXY: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an N-Channel enhancement mode MOSFET designed for switching applications, featuring advanced trench technology for low RDS(ON) and low gate charge.