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SI9407BDY-T1-GE3 AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

SI9407BDY-T1-GE3 product

SI9407BDY-T1-GE3

MOSFETs - Single

MOSFETP-Channel60VSO-8

The Si9407BDY is a 60V P-Channel TrenchFET MOSFET in an SO-8 package, suitable for primary side switching.

Best for

  • Primary side switching
  • Power management

Avoid if

  • Applications requiring higher current or voltage than specified

Check before use

  • Thermal dissipation requirements
  • Gate drive voltage

Key specifications

VDS
-60 V
ID
-4.7 A
RDS(on)
0.120 Ohm

Compliance & Environment

RoHS
ROHS3 Compliant
REACH
-
MSL
-
ECCN
EAR99
HTSUS
8541290095.0

Application

PowerIndustrial

Datasheet

40f7febc1ddbfd08a17fced81549346e_1806131626_Vishay-Intertech-SI9407BDY-T1-GE3_C141567.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for SI9407BDY-T1-GE3: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Where to Buy

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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a P-Channel 60V MOSFET from Vishay Siliconix, designed for high-efficiency switching applications.