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SI9926CDY-T1-GE3-HXY AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

SI9926CDY-T1-GE3-HXY product

SI9926CDY-T1-GE3-HXY

MOSFETs - Arrays

Dual MOSFETN-ChannelSOP-8

The SI9926CDY-T1-GE3 is a dual N-channel enhancement mode MOSFET in an SOP-8 package, designed for battery protection and switching applications.

Best for

  • Battery management systems
  • General purpose switching

Avoid if

  • High-voltage applications exceeding 20V

Check before use

  • Thermal design and gate drive voltage levels

Key specifications

VDS
20 V
ID
8 A
RDS(on)
20 mΩ

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power ManagementConsumer Electronics

Datasheet

0a20fa650c3b1ba834453d674e145e16_2403261740_HXY-MOSFET-SI9926CDY-T1-GE3-HXY_C22367025.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for SI9926CDY-T1-GE3-HXY: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a dual N-channel MOSFET utilizing advanced trench technology, optimized for low RDS(ON) and low gate charge.