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SIR426DP-T1-GE3-HXY AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

SIR426DP-T1-GE3-HXY product

SIR426DP-T1-GE3-HXY

MOSFETs - Single

N-ChannelMOSFET40VDFN5X6-8L

The SIR426DP-T1-GE3 is a 40V N-Channel MOSFET in a DFN5X6-8L package, designed for high-efficiency switching applications.

Best for

  • Battery protection
  • Load switching

Avoid if

  • Applications requiring extremely high reliability (e.g., life-support)

Check before use

  • Thermal design
  • Gate drive voltage

Key specifications

VDS
40 V
ID
55 A
RDS(on)
8.5 mΩ

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power ManagementIndustrial

Datasheet

73f05a5c711d81883654dc9f437002b9_2405211553_HXY-MOSFET-SIR426DP-T1-GE3-HXY_C22366803.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for SIR426DP-T1-GE3-HXY: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

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PCB Footprint
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3D Model
STEP file for mechanical design
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an N-Channel enhancement mode MOSFET utilizing advanced trench technology for low RDS(ON) and low gate charge.