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SIR464DP-T1-GE3-HXY AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

SIR464DP-T1-GE3-HXY product

SIR464DP-T1-GE3-HXY

MOSFETs - Single

MOSFETN-Channel30VPower

The SIR464DP-T1-GE3 is a 30V, 150A N-Channel MOSFET in a DFN5X6-8L package, optimized for high-current battery protection and switching.

Best for

  • Battery protection
  • Load switching
  • UPS

Avoid if

  • Applications requiring extremely low-profile or non-standard packages

Check before use

  • Thermal dissipation requirements
  • Package current limits

Key specifications

VDS
30 V
ID
150 A
RDS(ON)
2.4 mΩ

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power Management

Datasheet

16dddf33b5156f84129fa2f50b25e8fc_2403261736_HXY-MOSFET-SIR464DP-T1-GE3-HXY_C22366657.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for SIR464DP-T1-GE3-HXY: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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Where to Buy

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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an N-Channel enhancement mode MOSFET designed for high-efficiency switching applications.