SIR468DP-T1-GE3-HXY Datasheet, Specs, Alternatives & ECAD | HXY MOSFET | PartGenie

AI summary

SIR468DP-T1-GE3-HXY product

The SIR468DP-T1-GE3 is a 30V N-Channel SGT MOSFET in a DFN5X6-8L package, optimized for low RDS(ON) and fast switching in power management applications.

Best for

Motor control
Synchronous rectification
DC-DC converters

Avoid if

Applications requiring higher voltage ratings or through-hole mounting.

Check before use

Thermal design and gate drive requirements.

Key specifications

VDS: 30 V
ID: 60 A
RDS(on): 5.8 mΩ

Compliance & Environment

RoHS: -
REACH: -
MSL: -
ECCN: -
HTSUS: -

Application

Motor ControlPower Supply

Datasheet

fd0e0993e3fd2654ab123823590b8eb2_2404231719_HXY-MOSFET-SIR468DP-T1-GE3-HXY_C22366999.pdf

800 KB

CAD Models

Download ECAD models for SIR468DP-T1-GE3-HXY: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol

Schematic symbol for your EDA tool

PCB Footprint

Land pattern for PCB layout

3D Model

STEP file for mechanical design

KiCad Library

Verified KiCad 8 symbol, footprint, and 3D model

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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an N-Channel SGT (Shielded Gate Trench) enhancement mode MOSFET designed for high-efficiency switching.