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SIR662DP-T1-GE3-JSM AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

SIR662DP-T1-GE3-JSM product

SIR662DP-T1-GE3-JSM

MOSFETs - Single

N-ChannelMOSFET60V130A

The SIR662DP-T1-GE3 is a 60V, 130A N-Channel MOSFET utilizing advanced trench technology for high-efficiency power switching applications.

Best for

  • Power supplies
  • DC-DC converters
  • Motor control

Avoid if

  • Applications requiring extremely low gate drive voltages below 4.5V

Check before use

  • Thermal design and PCB layout for high current

Key specifications

VDS
60 V
ID
130 A
RDS(on)
3 mΩ

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power Management

Datasheet

6a772d9bef6eaa516a070a9dd170e0a0_2307141056_JSMSEMI-SIR662DP-T1-GE3-JSM_C7462820.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for SIR662DP-T1-GE3-JSM: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an N-Channel MOSFET designed for high-current, low-resistance power applications using trench technology.