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SIR836DP-T1-GE3-HXY AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

SIR836DP-T1-GE3-HXY product

SIR836DP-T1-GE3-HXY

MOSFETs

N-ChannelMOSFET40VDFN5X6-8L

The SIR836DP-T1-GE3 is a 40V N-Channel MOSFET in a DFN5X6-8L package, optimized for high-efficiency switching and battery protection.

Best for

  • Battery protection circuits
  • Load switching
  • UPS systems

Avoid if

  • Applications requiring extremely low gate drive voltages below 4.5V

Check before use

  • Thermal dissipation requirements for high-current operation

Key specifications

VDS
40 V
ID
55 A
RDS(on)
8.5 mΩ

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power ManagementIndustrial

Datasheet

103f13f5125b5d6c1f301e91ee1b8ec8_2406041712_HXY-MOSFET-SIR836DP-T1-GE3-HXY_C22366837.pdf

800 KB

Datasheet AI

CAD Models

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3D Model
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Where to Buy

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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an N-Channel enhancement mode MOSFET designed for power switching and battery protection, featuring low RDS(on) and low gate charge.