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SIR876ADP-T1-GE3 AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

SIR876ADP-T1-GE3 product

SIR876ADP-T1-GE3

MOSFETs - Single

MOSFETN-Channel100VPowerPAK

The SIR876ADP-T1-GE3 is a high-performance 100V N-Channel TrenchFET MOSFET designed for efficient power switching in compact applications.

Best for

  • DC/DC conversion
  • Telecom power supplies

Avoid if

  • Low-voltage applications where lower RDS(on) parts are available

Check before use

  • Thermal dissipation requirements

Key specifications

VDS
100 V
ID
40 A
RDS(on)
0.0108 Ohm

Compliance & Environment

RoHS
ROHS3 Compliant
REACH
-
MSL
-
ECCN
EAR99
HTSUS
8541290095.0

Application

PowerIndustrial

Datasheet

06bae4da4a5f075a9c2131227b800a0e_1806120931_Vishay-Intertech-SIR876ADP-T1-GE3_C114889.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for SIR876ADP-T1-GE3: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Where to Buy

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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a 100V N-Channel Power MOSFET from Vishay Siliconix, utilizing TrenchFET technology in a PowerPAK SO-8 package.