ProjectsPricingInsights

SIRA12DP-T1-GE3-HXY AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

SIRA12DP-T1-GE3-HXY product

SIRA12DP-T1-GE3-HXY

MOSFETs

N-ChannelMOSFET30V120A

The SIRA12DP-T1-GE3 is a 30V, 120A N-Channel MOSFET in a DFN5X6-8L package, optimized for high-efficiency power switching applications.

Best for

  • Battery protection
  • Load switching
  • UPS systems

Avoid if

  • Applications requiring voltages significantly above 30V

Check before use

  • Thermal dissipation requirements at high current

Key specifications

VDS
30 V
ID
120 A
RDS(on)
3.5 mΩ

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power ManagementIndustrial

Datasheet

4c6c06c5d9734996b5b860569447f903_2405061705_HXY-MOSFET-SIRA12DP-T1-GE3-HXY_C22366624.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for SIRA12DP-T1-GE3-HXY: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
Get Files
PCB Footprint
Land pattern for PCB layout
Get Files
3D Model
STEP file for mechanical design
Get Files
KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
Generate library

Login required · CAD models billed separately as an add-on

Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an N-Channel enhancement mode MOSFET using advanced trench technology, designed for high-current switching applications.