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SIRA60DP-T1-GE3 AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

SIRA60DP-T1-GE3 product

SIRA60DP-T1-GE3

MOSFETs - Single

MOSFETN-Channel30VPowerPAK

The SIRA60DP-T1-GE3 is a high-performance 30V N-Channel TrenchFET Gen IV MOSFET in a PowerPAK SO-8 package, optimized for high-efficiency power conversion.

Best for

  • DC/DC converters
  • Synchronous rectification

Avoid if

  • Applications requiring >30V VDS

Check before use

  • Thermal dissipation requirements

Key specifications

VDS
30 V
ID
100 A
RDS(on)
0.00094 Ohm

Compliance & Environment

RoHS
ROHS3 Compliant
REACH
-
MSL
-
ECCN
EAR99
HTSUS
8541290095.0

Application

Power Management

Datasheet

1399e1397b28b08bf0b49a9284efb5ae_1912200932_Vishay-Intertech-SIRA60DP-T1-GE3_C467954.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for SIRA60DP-T1-GE3: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Where to Buy

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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a 30V N-Channel power MOSFET from Vishay Siliconix, utilizing TrenchFET Gen IV technology for low on-resistance.