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SiS407DN-HXY AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

SiS407DN-HXY product

SiS407DN-HXY

MOSFETs - Single

P-ChannelMOSFET20V30A

The SiS407DN-HXY is a P-Channel enhancement mode MOSFET in a DFN3X3-8L package, optimized for low-voltage switching applications.

Best for

  • Battery management systems
  • Load switching
  • UPS

Avoid if

  • Applications requiring N-Channel logic
  • High-voltage systems exceeding 20V

Check before use

  • Thermal dissipation requirements
  • Gate drive voltage levels

Key specifications

VDS
-20 V
ID
-30 A
RDS(on)
< 15 mΩ

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power ManagementConsumer Electronics

Datasheet

f2915dab97887c91080ee0977f3f3703_2209201730_HXY-MOSFET-SiS407DN-HXY_C5148684.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for SiS407DN-HXY: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a P-Channel power MOSFET utilizing advanced trench technology, suitable for battery protection and load switching.