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SIS413DN-T1-GE3-HXY AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

SIS413DN-T1-GE3-HXY product

SIS413DN-T1-GE3-HXY

MOSFETs - Single

P-ChannelMOSFET30V55A

The SIS413DN-T1-GE3 is a P-channel enhancement mode MOSFET in a DFN3X3-8L package, designed for high-efficiency switching applications.

Best for

  • Battery management
  • Power switching

Avoid if

  • High-frequency switching requiring extremely low gate capacitance

Check before use

  • Thermal dissipation requirements

Key specifications

Drain-Source Voltage
-30 V
Continuous Drain Current
-55 A
On-Resistance
11 mΩ

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power Management

Datasheet

8f2436aa28893c6c91111c74b13c7fb4_2403261735_HXY-MOSFET-SIS413DN-T1-GE3-HXY_C22366586.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for SIS413DN-T1-GE3-HXY: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a P-channel enhancement mode MOSFET utilizing advanced trench technology, optimized for low RDS(on) and low gate charge.