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SISB46DN-T1-GE3-HXY AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

SISB46DN-T1-GE3-HXY product

SISB46DN-T1-GE3-HXY

MOSFETs - Arrays

Dual MOSFETN-Channel40VSGT

The SISB46DN-T1-GE3 is a dual N-channel SGT MOSFET optimized for high-efficiency power conversion and motor control.

Best for

  • Synchronous rectification
  • Motor control
  • Isolated DC-DC converters

Avoid if

  • Applications requiring extremely high voltage or current beyond 40V/40A

Check before use

  • Thermal dissipation capabilities on the PCB

Key specifications

VDS
40 V
ID
40 A
RDS(ON)
9.5 mΩ

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Motor ControlPower Supply

Datasheet

67c9e90069d4410ae82e8478a2d96f1b_2407151448_HXY-MOSFET-SISB46DN-T1-GE3-HXY_C22366987.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for SISB46DN-T1-GE3-HXY: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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Where to Buy

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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a dual N-channel SGT enhancement mode MOSFET designed for power management applications.