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SISS27DN-T1-GE3 AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

SISS27DN-T1-GE3 product

SISS27DN-T1-GE3

MOSFETs - Single

P-ChannelMOSFET30VPowerPAK

The SiSS27DN is a high-performance P-Channel 30V TrenchFET MOSFET in a compact PowerPAK 1212-8S package, optimized for power management in mobile and computing applications.

Best for

  • Notebook power management
  • DC/DC converters
  • Load switching

Avoid if

  • Applications requiring N-Channel polarity
  • High-voltage systems exceeding 30V

Check before use

  • Thermal dissipation requirements
  • Soldering profile for leadless packages

Key specifications

VDS
-30 V
ID
-50 A
RDS(on)
0.0056 Ohm
Package
PowerPAK 1212-8S

Compliance & Environment

RoHS
ROHS3 Compliant
REACH
-
MSL
-
ECCN
EAR99
HTSUS
8541290095.0

Application

Power ManagementMobile Computing

Datasheet

1a208f8e02dfcfc524f330831f34ebdb_doc.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for SISS27DN-T1-GE3: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
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Where to Buy

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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

The SiSS27DN is a 30V P-Channel TrenchFET Power MOSFET from Vishay Siliconix, housed in a low-profile PowerPAK 1212-8S package.