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SM4435PRL-HXY AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

SM4435PRL-HXY product

SM4435PRL-HXY

MOSFETs - Single

P-ChannelMOSFETSOP-830V

The SM4435PRL is a P-Channel enhancement mode MOSFET designed for battery protection and switching applications, featuring a -30V drain-source voltage and -11A current rating in an SOP-8 package.

Best for

  • Battery protection circuits
  • Load switching
  • Uninterruptible power supplies

Avoid if

  • Applications requiring N-Channel polarity
  • High-frequency switching beyond typical MOSFET capabilities

Check before use

  • Thermal dissipation requirements
  • Gate drive voltage compatibility

Key specifications

VDS
-30 V
ID
-11 A
RDS(ON)
< 16 mΩ

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Battery ManagementPower Switching

Datasheet

0e1ab868877b0b0433419d00e828910f_2403261738_HXY-MOSFET-SM4435PRL-HXY_C22366869.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for SM4435PRL-HXY: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

The SM4435PRL is a P-Channel enhancement mode MOSFET from HXY MOSFET, utilizing advanced trench technology to achieve low RDS(ON) and low gate charge.