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SM6366ED1RL-HXY AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

SM6366ED1RL-HXY product

SM6366ED1RL-HXY

MOSFETs - Single

MOSFETN-Channel30VPower

The SM6366ED1RL is a high-performance 30V N-Channel MOSFET in a DFN5X6-8L package, optimized for low-resistance power switching.

Best for

  • Battery protection circuits
  • Load switches
  • UPS systems

Avoid if

  • Applications requiring high-voltage isolation beyond 30V

Check before use

  • Thermal dissipation requirements at 120A

Key specifications

VDS
30 V
ID
120 A
RDS(on)
3.5 mΩ

Compliance & Environment

RoHS
Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power ManagementIndustrial

Datasheet

6291176b63c9ce4bc49a074efbcf8e99_2405061705_HXY-MOSFET-SM6366ED1RL-HXY_C22366625.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for SM6366ED1RL-HXY: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an N-Channel enhancement mode MOSFET designed for high-efficiency switching applications.