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SMBT3904DW1T1G AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

SMBT3904DW1T1G product

SMBT3904DW1T1G

Transistors - Bipolar (BJT) - Arrays

Dual NPNBJTSOT-363

The SMBT3904DW1T1G is a dual NPN general-purpose BJT transistor array in a SOT-363 package, suitable for space-constrained low-power amplifier and switching applications.

Best for

  • Low-power signal amplification
  • Space-constrained PCB designs

Avoid if

  • High-power switching applications exceeding 150mW total dissipation

Check before use

  • Thermal management in high-density layouts

Key specifications

Transistor Type
2 NPN (Dual)
VCEO
40 V
IC
200 mA
hFE
100 - 300

Compliance & Environment

RoHS
ROHS3 Compliant
REACH
REACH Unaffected
MSL
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.21.0075

Application

General Purpose Amplifier

Datasheet

ON-Semiconductor-company-79.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for SMBT3904DW1T1G: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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Where to Buy

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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a dual NPN general-purpose bipolar junction transistor (BJT) array housed in a 6-pin SOT-363 surface-mount package.