It is a 100V N-Channel Power MOSFET from Siliup, featuring advanced split gate trench technology for high-efficiency power switching.
SP010N01BGHTO AI Analysis:
Datasheet, Specs, Alternatives & ECAD
AI summary
Key specifications
- VDS
- 100 V
- ID
- 370 A
- RDS(on)
- 1.1 mΩ
Application
Power ManagementMotor Drive
Alternative components
Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.
