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SQ2303ES-T1_GE3-HXY AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

SQ2303ES-T1_GE3-HXY product

SQ2303ES-T1_GE3-HXY

MOSFETs - Single

MOSFETP-ChannelSOT-2330V

The SQ2303ES-T1_GE3 is a 30V P-Channel MOSFET in a SOT-23 package, designed for low-voltage switching and power management applications.

Best for

  • Battery protection
  • Load switching
  • PWM applications

Avoid if

  • High-voltage applications exceeding 30V

Check before use

  • Gate drive voltage levels
  • Thermal dissipation requirements

Key specifications

VDS
-30 V
ID
-4.1 A
RDS(on)
48 mΩ

Compliance & Environment

RoHS
Yes
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power ManagementBattery Protection

Datasheet

513036d6bda93d54bffdec5773f4bca8_2403251608_HXY-MOSFET-SQ2303ES-T1-GE3-HXY_C22367270.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for SQ2303ES-T1_GE3-HXY: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a P-Channel enhancement mode MOSFET using trench technology, optimized for low RDS(ON) and low gate charge.