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SQ2308CES-T1_GE3-HXY AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

SQ2308CES-T1_GE3-HXY product

SQ2308CES-T1_GE3-HXY

MOSFETs

N-ChannelMOSFET60VSOT-23

The SQ2308CES-T1_GE3 is a 60V N-Channel MOSFET in a SOT-23 package, optimized for low-voltage gate drive applications like battery protection and load switching.

Best for

  • Battery management
  • Load switching

Avoid if

  • High-current applications exceeding 3A continuous current

Check before use

  • Thermal dissipation on the PCB

Key specifications

VDS
60 V
ID
3 A
RDS(on)
85 mΩ

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power Management

Datasheet

87864e6c818c0c033f952c8f8b37567a_2403251637_HXY-MOSFET-SQ2308CES-T1-GE3-HXY_C22366547.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for SQ2308CES-T1_GE3-HXY: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an N-Channel enhancement mode MOSFET designed for efficient switching in low-voltage applications.