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SQ2309ES-T1_GE3-HXY AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

SQ2309ES-T1_GE3-HXY product

SQ2309ES-T1_GE3-HXY

MOSFETs - Single

P-ChannelMOSFETSOT-2360V

The SQ2309ES-T1-GE3 is a -60V, -2A P-channel enhancement mode MOSFET in a SOT-23 package, optimized for small power switching and load management.

Best for

  • Load switching
  • PWM control

Avoid if

  • High-current applications exceeding 2A

Check before use

  • Thermal dissipation limits in SOT-23

Key specifications

VDS
-60 V
ID
-2 A
RDS(on)
<200 mΩ

Compliance & Environment

RoHS
Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power ManagementGeneral Switching

Datasheet

6ac8f16139f54349a9812836756c1d1b_2403251636_HXY-MOSFET-SQ2309ES-T1-GE3-HXY_C22366720.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for SQ2309ES-T1_GE3-HXY: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a P-channel enhancement mode MOSFET utilizing high cell density trench technology, suitable for small power switching and PWM applications.