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SQ4946AEY-T1_GE3-HXY AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

SQ4946AEY-T1_GE3-HXY product

SQ4946AEY-T1_GE3-HXY

FETs

MOSFETDual N-Channel60V

The SQ4946AEY-T1_GE3 is a dual N-channel MOSFET in an SOP-8 package, optimized for battery protection and load switching applications with a 60V rating.

Best for

  • Battery protection circuits
  • Load switching
  • Uninterruptible power supplies

Avoid if

  • Applications requiring higher current or voltage ratings than specified.

Check before use

  • Thermal dissipation requirements
  • Gate drive voltage levels

Key specifications

VDS
60 V
ID
6.5 A
RDS(on)
32 mΩ

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Battery ProtectionLoad Switching

Datasheet

b5c3f4bc69e1bda5a88c6818eabb4147_2403251638_HXY-MOSFET-SQ4946AEY-T1-GE3-HXY_C22366493.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for SQ4946AEY-T1_GE3-HXY: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a dual N-channel enhancement mode MOSFET designed for switching applications, featuring advanced trench technology.