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SQD19P06-60L_GE3-HXY AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

SQD19P06-60L_GE3-HXY product

SQD19P06-60L_GE3-HXY

FETs

P-ChannelMOSFET60VDPAK

The SQD19P06-60L_GE3 is a 60V, 30A P-Channel MOSFET in a TO-252-2L package, designed for efficient power switching and battery protection.

Best for

  • Battery protection
  • Load switching
  • PWM control

Avoid if

  • Applications requiring N-Channel logic
  • Extremely space-constrained designs where DPAK is too large

Check before use

  • Thermal dissipation requirements
  • Gate drive voltage levels

Key specifications

VDS
-60 V
ID
-30 A
RDS(ON)
33 mΩ

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power ManagementLoad Switching

Datasheet

29efabdf1af4d769820ff91a24288236_2403251609_HXY-MOSFET-SQD19P06-60L-GE3-HXY_C22367143.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for SQD19P06-60L_GE3-HXY: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a P-Channel enhancement mode MOSFET using trench technology, optimized for low RDS(ON) and low gate charge.